? 2009 ixys all rights reserved 1 - 4 20090209b ixkc 15n60c5 ixys reserves the right to change limits, test conditions and dimensions. advanced technical information i d25 = 15 a v dss = 600 v r ds(on) max = 0.165 coolmos ? 1) power mosfet features ? silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500 v electrical isolation - low drain to tab capacitance (< 30 pf) ? fast coolmos ? 1) power mosfet 4 th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (uis) - low thermal resistance due to reduced chip thickness ? enhanced total power density applications ? switched mode power supplies (smps) ? uninterruptible power supplies (ups) ? power factor correction (pfc) ? welding ? inductive heating ? pdp and lcd adapter advantages ? easy assembly: no screws or isolation foils required ? space savings ? high power density ? high reliability mosfet symbol conditions maximum ratings v dss t vj = 25c 600 v v gs 20 v i d25 i d90 t c = 25c t c = 90c 15 11 a a e as e ar single pulse repetitive 522 0.79 mj mj dv/dt mosfet dv/dt ruggedness v ds = 0...480 v 5 0 v/ns d g s electrically isolated back surface 2500 v electrical isolation n-channel enhancement mode low r dson , high v dss mosfet ultra low gate charge i d = 7.9 a; t c = 25c symbol conditions characteristic values (t vj = 25 c, unless otherwise speci? ed) min. typ. max. r dson v gs = 10 v; i d = 12 a 150 165 m v gs(th) v ds = v gs ; i d = 0.79 ma 2.5 3 3.5 v i dss v ds = 600 v; v gs = 0 v t vj = 25c t vj = 125c 10 1a a i gss v gs = 20 v; v ds = 0 v 100 na c iss c oss v gs = 0 v; v ds = 100 v f = 1 mhz 2000 100 pf pf q g q gs q gd v gs = 0 to 10 v; v ds = 400 v; i d = 12 a 40 9 13 52 nc nc nc t d(on) t r t d(off) t f v gs = 10 v; v ds = 400 v i d = 12 a; r g = 3.3 12 5 50 5 ns ns ns ns r thjc 1.1 k/w 1) coolmos ? is a trademark of in? neon technologies ag. isoplus220 tm g d s isolated back surface q e72873
? 2009 ixys all rights reserved 2 - 4 20090209b ixkc 15n60c5 ixys reserves the right to change limits, test conditions and dimensions. advanced technical information source-drain diode symbol conditions characteristic values (t vj = 25 c, unless otherwise speci? ed) min. typ. max. i s v gs = 0 v 12 a v sd i f = 12 a; v gs = 0 v 0.9 1.2 v t rr q rm i rm i f = 12 a; -di f /dt = 100 a/s; v r = 400 v 390 7.5 38 ns c a component symbol conditions maximum ratings t vj t stg operating storage -55...+150 -55...+150 c c v isol rms leads-to-tab, 50/60 hz, f = 1 minute 2500 v~ f c mounting force 11-65 / 2.4-11 n/lb symbol conditions characteristic values min. typ. max. r thch with heatsink compound 0.35 k/w weight 2.7 g
? 2009 ixys all rights reserved 3 - 4 20090209b ixkc 15n60c5 ixys reserves the right to change limits, test conditions and dimensions. advanced technical information isoplus220 tm outline 2x b2 l1 l a2 2x b4 2x e 3x b 1 2 3 c d e a t * note 1 sym a2 b4 d1 b2 l1 e1 e 1. bottom heatsink is electrically isolated from pin 1, 2, or 3. product outline to-273 except d and d1 dimension. 2. this drawing will meet dimensi onal requirement of jedec ss note: t l e b c d a 11.00 10.00 .433 .394 13.00 3.00 42.5 7.50 .118 .100 .512 .295 .138 .571 .335 basic 14.50 3.50 8.50 47.5 2.55 basic 2.50 4.00 2.35 12.00 15.00 .051 .035 .028 .472 .591 .093 .049 .039 .512 .630 .100 .065 inches min .098 .157 max .118 .197 1.30 0.90 2.55 1.65 1.00 0.70 13.00 16.00 1.25 millimeters max min 3.00 5.00 4.5 v 5v 5.5 v 6v 8v 10v 12v 20 v 0 20 40 60 80 05101520 v ds [v] i d ] a [ 4.5 v 5v 5.5 v 6v 8v 10 v 12v 20 v 0 10 20 30 40 0 5 10 15 20 v ds [v] i d ] a [ t j = 25c v gs = v gs = t j = 125c fig. 1 power dissipation fig. 2 typ. output characteristics fig. 3 typ. output characteristics 0 40 80 120 160 0 20 40 60 80 100 120 t c [c] p tot [ w]
? 2009 ixys all rights reserved 4 - 4 20090209b ixkc 15n60c5 ixys reserves the right to change limits, test conditions and dimensions. advanced technical information single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z c j h t ] w / k [ typ 98% 0 0.1 0.2 0.3 0.4 0.5 -60 -20 20 60 100 140 180 t j [c] r ) n o ( s d [ ] 25 c 150 c 0 20 40 60 80 100 0246810 v gs [v] i d ] a [ 7v 10 v 0 0.2 0.4 0.6 0.8 1 1.2 0 1020304050 i d [a] r ) n o ( s d [ ] 5v 5.5 v 6v 6.5 v 12 0v 40 0v 0 1 2 3 4 5 6 7 8 9 10 0 10203040 q gate [nc] v s g ] v [ 25 c 150 c 25 c, 98% 150 c, 98% 10 2 10 1 10 0 10 -1 00.511.52 v sd [v] i f ] a [ ciss coss crss 10 5 10 4 10 3 10 2 10 1 10 0 0 100 200 300 400 500 v ds [v] c] f p [ 0 100 200 300 400 500 600 20 60 100 140 180 t j [c] e s a ] j m [ 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v ) s s d ( r b ] v [ v ds = t jv = 150c i d = 12 a v gs = 10 v v ds > 2 r ds(on) max i d t j = t j = v ds = 120 v v gs = 0 v f = 1 mhz i d = 7.9 a i d = 0.75 ma d = t p /t i d = 12 a pulsed fig. 5 drain-source on-state resistance fig. 4 typ. drain-source on-state resistance fig. 7 forward characteristic of reverse diode fig. 8 typ. gate charge fig. 10 avalanche energy fig. 11 drain-source breakdown voltage fig. 6 typ. transfer characteristics fig. 9 typ. capacitances
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